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While comparing the system speed rates, very few advantages can be seen for 75 Mhz (101 percent) and 83 Mhz (100 percent) as a result of impractical multipliers. Users are advised not to goo for such mother boards with such strange bus speeds. It is wiser to get a 100 Mhz board. The clear increase in the system speed does not seem to effectively outdo the small reduction in the processor speed. On an average the difference are too small to allow one to judge the operational consequences.
In contrast with Fast Page Mode DRAM (FPM DRAM) Extended Data Out DRAM (EDO DRAM) does not simultaneously use control line (pilot wire) CAS (column Address Strobe) as an indicator for a valid fitting column address and as signal for valid readable data. The data thereby remains readable, while the next column address is transmitted. The time window for the memory access diminished and the average increases. The synchronous DRAM (SDRAM) principally uses the same memory location, but does not have additional logic for optimization of Burst Accesses. i.e. for the transfer of data on the subsequent memory locations. With this the SDRAM itself generates the addressing for the following memory locations after triggering a Burst -access through the RAM-controller. This happens synchronous to a speed signal, in a normal case synchronous to the system-speed, with one signal per delivered date. A typical Burst-Access with four consequent addresses require only 5-1-1-1 signal, in a ideal case. EDO-DRAM on the contrary, brings this to a 4-2-2-2 cycle.
Tip: Good DIMM-modules contain an additional tiny EPROM in which the manufacturer stores important Timing Parameters apart from the RAM -chips. Through this, a Board chipset can ideally adjust to every module. The RAM -controller needs no advice. Chipsets like 440LX from intel actually make the parameter-Memory a prerequisite. Go To Page: 1 2 |
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